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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1854
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1854 is a switching device which can be driven directly by a 2.5-V power source. The PA1854 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit : mm)
5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2
1.2 MAX. 1.00.05 0.25 3 +5 -3 0.10.05 0.5 0.6 +0.15 -0.1
FEATURES
* Can be driven by a 2.5-V power source * Low on-state resistance RDS(on)1 = 60 m MAX. (VGS = -4.5 V, ID = -1.5 A) RDS(on)2 = 70 m MAX. (VGS = -4.0 V, ID = -1.5 A) RDS(on)3 = 105 m MAX. (VGS = -2.5 V, ID = -1.5 A) * Built-in G-S protection diode against ESD
1 4
0.145 0.055
3.15 0.15 3.0 0.1
6.4 0.2 4.4 0.1 1.0 0.2
ORDERING INFORMATION
PART NUMBER PACKAGE Power TSSOP8
0.65 0.27 +0.03 -0.08 0.8 MAX.
PA1854GR-9JG
0.1
0.10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
-12 -10/+5
V V A A W C C
Gate Protection Diode Gate1
EQUIVALENT CIRCUIT
Drain1 Drain2
# 3.0 # 12
2.0 150 -55 to +150
Total Power Dissipation Channel Temperature Storage Temperature
Body Diode
Gate2
Body Diode
Notes 1. PW 10 s, Duty Cycle 1 % 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark
Source1
Gate Protection Diode
Source2
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13295EJ1V0DS00 (1st edition) Date Published August 1999 NS CP(K) Printed in Japan
(c)
1998, 1999
PA1854
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = -12 V, VGS = 0 V VGS = # 10 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -1.5 A VGS = -4.5 V, ID = -1.5 A VGS = -4.0 V, ID = -1.5 A VGS = -2.5 V, ID = -1.5 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -10 V ID = -1.5 A VGS(on) = -4.0 V RG = 10 VDD = -10 V ID = -3.0 A VGS = -4.0 V IF = 3.0 A, VGS = 0 V IF = 1.0 A, VGS = 0 V di/dt = 50 A / s -0.5 1 -0.9 6.0 46 49 75 737 322 195 82 460 860 1380 8 2 3 0.80 29 6 60 70 105 MIN. TYP. MAX. -10
# 10
UNIT
A A
V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC
-1.5
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG RG = 10 VDD
ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS
IG = 2 mA
VGS(on) 90 %
VGS
Wave Form
RL VDD
0
10 %
PG.
50
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
2
Data Sheet D13295EJ1V0DS00
PA1854
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80
FORWARD BIAS SAFE OPERATING AREA -100
d ite ) im 5 V
dT - Derating Factor - %
ID - Drain Current - A
-10
ID (pulse)
PW
)L 4. on S( =- RD GS
=1
60
V (@
ID (DC)
-1
10 0m s DC
10 ms
ms
40
20
0
Single Pulse Mounted on Ceramic 2 Substrate of 50cm x 1.1mm -0.01 PD(FET1) : PD(FET2) = 1:1
-0.1
30 60 90 120 TA - Ambient Temperature - C
150
-0.1
-1.0
-10.0
-100.0
VDS - Drain to Source Voltage - V
-15
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
TRANSFER CHARACTERISTICS -100 -10 VDS = -10 V
VGS = -4.5 V
ID - Drain Current - A
-4.0 V -10
ID - Drain Current - A
- 2.5 V
-1 -0.1 -0.01 -0.001
TA = 125 C 75 C 25 C -25 C
-1 -2 -3
-5
-0.0001
0 0 -0.2 -0.4 -0.6 -0.8 -1.0
-0.00001 0
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
VGS(off) - Gate to Source Cut-off Voltage - V
-1.5
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = -10 V ID = -1 mA 100
| yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMMITTANCE vs. DRAIN CURRENT VDS = -10 V
10
TA = -25 C 25 C
-1.0
1
75 C 125 C
0.1
-0.5 -50
0
50
100
150
0.01 -0.01
-0.1
-1
-10
-100
Tch - Channel Temperature - C
ID - Drain Current - A
Data Sheet D13295EJ1V0DS00
3
PA1854
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = -2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 90 VGS = -4.0 V
RDS(on) - Drain to Source On-State Resistance - m
90
TA = 125C 75C
RDS(on) - Drain to Source On-State Resistance - m
70
TA = 125C 75C
80
25C
70
-25C
50
25C -25C
60
-0.01
-0.1
-1
-10
-100
30 -0.01
-0.1
-1
-10
-100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 VGS = -4.5 V
ID - Drain Current - A
DRAIN TO SOURCE ON STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 ID = -1.5 A VGS = -2.5 V
RDS(on) - Drain to Source On-State Resistance - m
RDS (on) - Drain to Source On-state Resistance - m
80 -4.0 V 60 -4.5 V
TA = 125C
60
75C 25C
40
-25C
40
20 -0.01
-0.1
-1
-10
-100
20 -50
ID - Drain Current - A
RDS (on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
0 50 100 Tch - Channel Temperature -C
150
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
Ciss, Coss, Crss - Capacitance - pF
120
ID = -1.5 A
f = 1 MHz
100
1000
80
Ciss Coss Crss
60
100
40 20
0
-2
-4
-6
-8
-10
10 -0.1
-1
-10
-100
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
4
Data Sheet D13295EJ1V0DS00
PA1854
SWITCHING CHARACTERISTICS 10000 VDD = -10V VGS(on) = -4.0V RG = 10 tf tr td(off)
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
td(on), tr, td(off), tf - Swwitchig Time - ns
IF - Source to Drain Current - A
1000
10 VGS = 0 V 1
100
td(on)
0.1
10 -0.1
-1 ID - Drain Current - A
-10
0.01 0.4
0.6
0.8
1.0
1.2
VF(S-D) - Source to Drain Voltage - V
DYNAMIC INPUT CHARACTERISTICS -6
VGS - Gate to Source Voltage - V
ID = -3.0 A
-5 -4 -3 -2 -1 0 0 VDD = -10 V
1
2
3
4
5
6
7
8
9
10
QG - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
62.5C/W
10
1
Mounted on Ceramic Substrate of 50cm2 x 1.1mm Single Pulse PD(FET1) : PD(FET2) = 1:1
0.1 1m
10m
100m
1
10
100
1000
PW - Pulse Width - S
Data Sheet D13295EJ1V0DS00
5
PA1854
[MEMO]
6
Data Sheet D13295EJ1V0DS00
PA1854
[MEMO]
Data Sheet D13295EJ1V0DS00
7
PA1854
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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